Vertical monolithic integration of wide- and narrow-bandgap semiconductor nanostructures on graphene films

Ultrafast Spectroscopy of Wide Bandgap Semiconductor Nanostructures

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...

Nanomaterials and Nanotechnology Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

Wide bandgap semiconductor ZnO, GaN and InN nanowires have displayed the ability to detect many types of gases and biological and chemical species of interest. In this review, we give some recent examples of using these nanowires for applications in pH sensing, glucose detection and hydrogen detection at ppm levels. The wide bandgap materials offer advantages in terms of se...

Physical simulation, fabrication and characterization of Wide bandgap semiconductor devices

Wide Bandgap Semiconductor Devices and MMICs: A DARPA Perspective

This paper reports on the recent successful completion of Phase I of DARPA’s Wide Bandgap Semiconductor Technology Initiative (WBGSTI). Phase I results are given for semi-insulating substrates and epitaxial growth, and a description and expectations for the upcoming Phases II and III are also provided. INTRODUCTION Wide bandgap devices and MMICs with high power density, high power added efficie...

Wide Bandgap Semiconductor Substrates: Current Status and Future Trends

Wide bandgap semiconductors have expanded the scope of device applications beyond those of silicon and gallium arsenide. Exploitation of wide bandgap semiconductors holds promise for revolutionary improvements in the cost, size, weight and performance of a broad range of military and commercial microelectronic and opto-electronic systems. The inherent material properties of silicon carbide, gal...